Description
SPECIFICATIONS
- Capacity: 500GB
- Form Factor: M.2 2280
- Interface: Sequential read up to 2100MB/s read, sequential write up to 1600MB/s
- IOPS: up to 188/156K
- NAND flash: 3D TLC
- Operating Temperature: 0° C to 70° C
- Storage Temperature: -40° C to 85° C
- Shock Resistant: 1500G, duration 0.5ms, Half Sine Wave
- Vibration Resistant: 10~2000Hz, 1.5mm, 20G, 1 Oct/min, 30min/axis(X,Y,Z)
- TBW: 250TB
- DWPD: 0.46
- MTBF: 1,500,000 Hours
- Dimension (L x W x H): 80 mm x 22 mm x 2.25 mm
*Up to 2100MB/s read transfer, write transfer speeds lower. Speeds based on internal testing. Actual performance may vary.
* Shock resistant (1500G, duration 0.5ms, Half Sine Wave) and vibration resistant (10~2000Hz, 1.5mm, 20G, 1 Oct/min, 30min/axis(X,Y,Z)). Based on internal testing. Actual performance may vary.
* Comparison based on internal testing. Actual performance may vary.